Band-Gap and Band-Edge Engineering of Multicomponent Garnet Scintillators from First Principles
نویسندگان
چکیده
منابع مشابه
Band-gap engineering for removing shallow traps in rare-earth Lu3Al5O12 garnet scintillators using Ga3+ doping
M. Fasoli,1 A. Vedda,1 M. Nikl,2 C. Jiang,3 B. P. Uberuaga,3 D. A. Andersson,3 K. J. McClellan,3 and C. R. Stanek3,* 1Department of Materials Science, University of Milano-Bicocca, Milan 20125, Italy 2Institute of Physics AS CR, Prague 162 53, Czech Republic 3MST-8 Structure and Property Relations, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA (Received 4 August 2011; publis...
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ژورنال
عنوان ژورنال: Physical Review Applied
سال: 2015
ISSN: 2331-7019
DOI: 10.1103/physrevapplied.4.054012